IRGB4610DPBF transistor equivalent, insulated gate bipolar transistor.
Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs s.
* Appliance Drives
* Inverters
* UPS
Features Low VCE(ON) and switching losses Square RBSOA and maximum junc.
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